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In DRAM, the metal lines linking the array to the periphery contain multiple pitches which are actually incompatible. ... <看更多>
中文的意思是，〔特徵尺寸〕，定義為DRAM的一半線寬(half pitch)。 ps.舉個例子，我們常說的90/65/45/32奈米製程，這些指的是製程世代/ .. ... <看更多>
#1. 利用虛擬處理加速製程最佳化：DRAM製造案例 - 電子工程專輯
在此案例中，DRAM有效區域(AA)的間距(pitch)為28奈米，利用自我對準四重曝光(SAQP)和20°傾斜的微影-刻蝕-光刻蝕(LELE或LE2)進行蝕刻。
#2. DRAM Scaling Trend and Beyond | TechInsights
When it comes to DRAM cell scaling, we refer to the cell pitch trends from Samsung, SK Hynix, and Micron DRAM products, including active, WL, and BL pitches.
#3. RPC DRAM - Innovative DRAM - 鈺創科技 - Etron Technology
Etron RPC DRAM® (RPC ® ) 可提供系統用戶獨特並具有價值的優勢，其採用晶圓級晶粒封裝(WLCSP, ... 0.8 mm pitch: ECP5 + DDR3 (Left), 0.5 mm pitch ECP5 + RPC (Right).
#4. DRAM Periphery Metal Patterning Pitch Incompatibilities
In DRAM, the metal lines linking the array to the periphery contain multiple pitches which are actually incompatible.
#5. Pitch Device Design in 10nm-Class DRAM Process through ...
In this paper, we will show how we design the sub-wordline-driver (SWD) devices in a DRAM chip, taking into account of process limitations and variations,.
#6. DRAM Product Half-Pitch Gate Length Trend [13]
Download scientific diagram | DRAM Product Half-Pitch Gate Length Trend [13] from publication: Evolutionary Algorithms in Unreliable Memory | Guaranteeing ...
#7. DRAM structures
6F2 DRAM. 4F2 DRAM. Cell size. Memory capacity. Process difficulty. • 'F' means feature size, which is half the line pitch (i.e. F=pitch/2).
#8. DRAM half pitch - Encyclopedia - The Free Dictionary
DRAM half pitch. The common measure of the technology generation of a chip. It is half the distance between cells in a dynamic RAM memory chip.
#9. 6F2 DRAM cell design with 3F-pitch folded digitline sense ...
The present invention is generally related to the field of DRAM architecture, and, more particularly, to a 6F 2 DRAM architecture with a 3F-pitch folded ...
#10. DRAM half pitch - CLC Definition - ComputerLanguage.com
Redirected from: DRAM half pitch. Definition: feature size. The size of the elements on a chip, which is used to measure and designate the chip generation ...
#11. Sub-0.0013 um2 DRAM Storage Node Patterning - LinkedIn
Figure 1. Storage nodes (yellow) on a DRAM cell grid. BLP=bit line pitch, WLP=word line pitch. A 38 nm bit line pitch ...
#12. Re: [問題] 半導體的問題- 看板Electronics - 批踢踢實業坊
中文的意思是，〔特徵尺寸〕，定義為DRAM的一半線寬(half pitch)。 ps.舉個例子，我們常說的90/65/45/32奈米製程，這些指的是製程世代/ ...
#13. a 28 nm Pitch DRAM Active Area - Lithography - SemiWiki
14 nm half-pitch DRAM active area. This pattern has some noteworthy symmetries. It repeats every six rows. Each row is also shifted by a sixth ...
#14. Inside 1α — the World's Most Advanced DRAM Process ...
Micron recently announced that we're shipping memory chips built using the world's most advanced DRAM process technology.
#15. 1.27mm (.050") Pitch DIMM 8-Byte DRAM Socket
Sockets and Edge Connectors. 1.27mm (.050") Pitch. DIMM 8-Byte DRAM Socket. 71251. Multi-Key. Plastic PEG Version. FEATURES AND SPECIFICATIONS.
#16. Emma Dram makes pitch to be Naperville Central's goalkeeper
Emma Dram makes pitch to be starting goalkeeper for Naperville Central, which has 'really big shoes to fill'.
#17. Service & Products
... is defined to have the thickness of 1.2 mm and 1.0 - 0.8 mm ball pitch. ... DDR SDRAM, DDR II SDRAM, RAMBUS DRAM and next generation memory products.
#18. Shri Ram Pitch(a)thon | IBM - Unstop
Shri Ram Pitch(a)thon a competitions by Shri Ram College of Commerce (SRCC), University of Delhi (DU), Delhi open to All Apply online before ...
#19. Verification of HBM through Direct Probing on MicroBumps
DRAM die. Logic die. HBM Stack. DRAM. FAB. DRAM ... Cross talk due to small pitch of MicroBumps and contactor space transformer design. • Mechanical.
#20. Copper Pillar Bump - 瑞峰半導體
Applications: Dynamic Random Access Memory (DRAM), Memory controller, FPGA, Wi-Fi, ... Bump Pitch: 40μm and above; Pillar Height: 75μm and below for 12-inch ...
#21. Process integration of fine pitch Cu redistribution wiring and ...
DRAM wafers to relocate the Al bond pads where 40 μm pitch SnCu bumps are formed for a large number of I/Os of the memory interface. A phenol-melamine based ...
#22. RAM Golf Pitch and Putt Lightweight Golf Carry Bag with ...
Amazon.com : RAM Golf Pitch and Putt Lightweight Golf Carry Bag with Stand Black/Red : Sports & Outdoors.
#23. Ram Golf Pitch and Putt Lightweight Golf Carry Bag with Stand
Ram Golf Pitch and Putt Lightweight Golf Carry Bag with Stand Perfect for pitch and putts, practice at the range, or if you are just getting started, ...
#24. Memory Catalog - ROHM Semiconductor
Video Memory Series. DRAM SDRAM Series. Icon. Descriptions. Capacity. I/O. Thin. (H=1.2mm). ×8bit. TSOP(II)28. 4Mbit /16Mbit. 400mill. 1.27mm Pitch.
#25. 美光：下一代DRAM技术面临哪些困境？
另外，在DRAM领域，美光更是三家内存原厂中唯一在1α制程中没有导入EUV工艺的厂商。近日有报道称，美光最新1α制程产品拥有0.315Gb/mm²的存储密度，half pitch ...
#26. 10 nm process - Wikipedia
According to the 2007 edition of the roadmap, by the year 2022, the half-pitch (i.e., half the distance between identical features in an array) for a DRAM ...
#27. Next Generation DRAM Temperature Requirements and ...
Probe card solutions not only need to satisfy the challenges of reduced pad pitch, pad size and increase temperature range but also must ...
#28. VHM™ - IoT RAM and AI Memory enhance IoT around your life.
AP Memory provides customized high-bandwidth low-power DRAM for SoC design ... The tight bonding pitch enables better performance, lower power and latency.
#29. How Atomic Layer Deposition Impacts the Logic & Memory ...
3D-NAND. 2D-DRAM. 2D-DRAM Pitch size ... 3D-DRAM. 4. Logic and Memory architectures going 3D ... DRAM and 3D-NAND main memory technologies.
#30. 半節距 - 中文百科全書
半節距（half-pitch），是指晶片內部互聯線間距離的一半，也即光刻間距的一半。由於歷年來每一個新的技術節點總是用於製造DRAM晶片，因此最新的技術節點往往是指DRAM的 ...
#31. 256 Mb (16M x 16 bit), 1.8V MirrorBit® Flash and DDR DRAM
DDR DRAM. Table 1 and Table 2 lists the products covered in this datasheet. ... 256 Mb (16M × 16-bit) DDR DRAM ... 133-Ball Fine-Pitch Ball Grid Array MCP.
#32. 產品資訊-全球體積最小之DRAM – RPC DRAM-鈺創科技股份 ...
鈺創科技自力研發之全球體積最小之DRAM - RPC DRAM，可用於IoT /可穿戴/ TCON /視頻/終端人工智能系統之4.8GB...
#33. IRDM PRO DDR4 PITCH BLACK - GOODRAM
Efficient DDR4 technology; Capacity up to 32 GB Dual Channel; Up to 4000 MHz with 18-22-22 timings; Premium sorted DRAM components; Lifetime warranty.
#34. 【专利解密】长鑫存储在堆栈式DRAM中的技术改进 - 集微网
【嘉德点评】长鑫存储买下了奇梦达留下的1000万份关于DRAM技术的文件，其中就包括奇梦达 ... 我们采用双重曝光(Double Patterning)、间距倍增(Pitch Doubling)及四重 ...
#35. A Dram from a Timber Raft entering the Main pitch, Lachine ...
A Dram from a Timber Raft entering the Main pitch, Lachine Rapids, St. Lawrence River. Ok. Record Information – Brief.
#36. 先進微影技術發展(一)：既有設備路徑的延伸 - DigiTimes
過去此數字的確是代表此一製程的臨界尺度，譬如邏輯製程的閘極長度（gate length）或者DRAM的半金屬間距（half metal pitch）。
#37. eMMC嵌入式記憶體| BGAE540 SE eMMC 153-ball/100-ball
SMART Modular世邁科技DuraFlash BGAE540符合eMMC v5.1規範及JEDEC 0.5mm pitch 153-ball 11.5mm x 13mm BGA封裝與1.0mm pitch 100-ball 14mm x 18mm BGA ...
#38. A 16mb Dram with an Open Bit-Line Architecture
A novel relaxed sense-amplifier-pitch (RSAP) open-bit-line architecture used on the DRAM achieves a high-density memory cell array, while maintaining a ...
#39. DRAM - Albums, Songs, and News | Pitchfork
Jump To: Reviews (3); News (36); Tracks (10); Features (10); The Pitch (1) ...
#40. Definition of DRAM half pitch - PCMag
What does DRAM half pitch actually mean? Find out inside PCMag's comprehensive tech and computer-related encyclopedia.
#41. Micron Delivers Industry First 1α DRAM Technology
Micron announced 1-alpha node DRAM, a leap in DRAM process technology ... of the 10nm class where the half-pitch ranges from 10 to 19nm.
#42. HBM3 Icebolt | DRAM | Specs & Features
Samsung HBM3 Icebolt takes metaverse, AI, and big data technologies to a new level. It delivers up to 6.4Gbps throughput and 819 GB/s bandwidth with less ...
#43. Computational RAM: Implementing Processors in Memory
COMPUTATIONAL RAM is a processor- in-memory architecture that makes highly effective use of internal memory bandwidth by pitch-matching simple processing ...
#44. DDR2 - 太极半导体(苏州)有限公司
Ball/Lead Pitch, Ball Size. 60B wBGA ... Package Type, Package Size, Ball Size, Ball/Lead pitch. 78B wBGA ... Test Platform. DRAM; NAND; DIMM; LOGIC ...
#45. Standards & Documents Search | JEDEC
Title Document # Date Graphics Double Data Rate (GDDR6) SGRAM Standard JESD250D May 2023 NAND Flash Interface Interoperability JESD230F.01 May 2023 DDR5 Clock Driver Definition (DDR5CK01) JESD82‑531 May 2023
#46. 半導體pitch定義2023-精選在Instagram/IG照片/Dcard上的焦點 ...
中文的意思是，〔特徵尺寸〕，定義為DRAM的一半線寬(half pitch)。 ps.舉個例子，我們常說的90/65/45/32奈米製程，這些指的是製程世代/ ..
#47. DRAM Scaling Challenges Grow - Semiconductor Engineering
The physical limit for DRAM is somewhere around 10nm. There are efforts in R&D to extend the technology, and ultimately to displace it with new ...
#48. DRAM Design Overview Contents - Stanford University
DRAM Design Overview. Junji Ogawa. Bascic Bitline Structure (1). Memory. Array. BL. WL. Memory. Array. /BL. S/As. Open Bitlines. Relaxed S/A layout pitch.
#49. An Implementer's Guide to Low-Power and High-Performance ...
DRAM. 2x32 LPDDR2 ~ 6.4GB/s. AMD Radeon R7950 Black Edition. 384-bit bus, 264GB/s, ... Combination of PoP ball pitch, DRAM bond pads, package routing.
#50. A 16-Mbit DRAM with a relaxed sense-amplifier-pitch open-bit ...
A 16-Mbit DRAM with a relaxed sense-amplifier-pitch open-bit-line architecture.
#51. Portable Pitch Respect Barriers - Rope - Ram Rugby
Keep spectators a safe distance from the action with our pitch respect barriers which include a 100m barrier tape and poles. Buy Online.
#52. Pitch - ET2 Lighting
Sleek and simply, the effortlessly chic oversized cone pendants add a modern touch to elevate your space. A surprisingly bright single light source is ...
#53. 3D DRAM Design and Application to 3D Multicore Systems
bit line pitch), which can result in nontrivial TSV fab- rication challenges, particularly as DRAM technology continues to scale down.
#54. OVERALL ROADMAP TECHNOLOGY CHARACTERISTICS
As mentioned above, the DRAM interconnect half-pitch will continue to be used as the most representative feature of leading-edge semiconductor manufacturing ...
#55. Molex 740810001 1.27mm Pitch DIMM 8-Byte DRAM Socket ...
00dc 1.27mm Pitch DIMM 8-Byte DRAM Socket, Vertical, Multi-Key, High-Temperature Nylon, Forklock Version, 168 Circuits.
#56. FBGA - LF/TF/VF/WF/UF BGA - ASE Kaohsiung
Package, Total Thickness, Package Profile, Solder Ball Pitch ... This package is highly recommended for Memory (SRAM, PSRAM, Flash, DRAM), Graph, ASIC, ...
#57. Half-Pitch - Halbleiter.org
Der Half-Pitch (hp) ist definiert als der kleinste Half-Pitch zweier Leiterbahnen in einem Produkt. Da die Abmessungen in dynamischen Speicherzellen (DRAM) am ...
#58. Pathfinding by process window modeling - DRAM - Coventor
The available patterning schemes to manufacture a 40 nm hole array include EUV LE, LE4, double SADP (80 nm mandrel pitch), and double SAQP ...
#59. High density hexagonal MTJ array with 72 nm ... - NASA/ADS
NASA/ADS · High density hexagonal MTJ array with 72 nm pitch and 30 nm CD by using advanced DRAM patterning solution and ion beam etch.
#60. IC構裝設備技術現況與展望
Interconnect to I/O Pitch (mm) Status/Product. Comments. Lower. Substrate. Leadframe wire bond to Si. 1.0. Pilot/16M DRAM Resin over isolating film.
#61. Hynix DRAM layout, process integration adapt to change
Hynix 44 nm and Hynix 31 nm both have the same WL pitch (88 nm), which by conventional definition implies that the technology node is 44 nm.
#62. Ram Golf Pitch and Putt Lightweight Golf ... - Walmart Canada
Buy Ram Golf Pitch and Putt Lightweight Golf Carry Bag with Stand Black/Neon from Walmart Canada. Shop for more Golf Bags & Carts available online at ...
#63. China is countering US chip ban - Taipei Times
... DRAM chips with a half-pitch less than or equal to 18 nanometers and NAND chips with 128 or more layers also require approval; ...
#64. A Novel Multi-Fin DRAM Periphery Transistor Technology ...
It is expected that a half pitch of a DRAM memory cell will be shrunk by around 10% every year according to ITRS 2007. A cell size factor (which.
#65. Technology Node - WikiChip
It does not correspond to any gate length or half pitch. ... it was DRAM that became the driver of technology scaling.
#66. High density hexagonal MTJ array with 72 nm pitch and 30 nm ...
The industrial DRAM array patterning solution has two SADP steps [Figs. 1(b) and 1(c)]: (1) an intermediate HM in equally spaced line pattern is ...
#67. GCOM-6040 IC Test Handler - TurboCATS
... is an unmatched automated testing solution for different ICs (DRAM, LPDDR and NAND). ... Load/ Unload picker: 6 pickers (variable pitch); Bin: All bin 1 ...
#68. Hynix 30nm DRAM Layout, Process Integration
The article below discusses advances in DRAM memory at Hynix. ... the technology node for DRAM is defined as the half-wordline pitch.
#69. DRAM Goodram DDR4 IRDM PRO DIMM 8GB 3600MHz ...
DRAM Goodram DDR4 IRDM PRO DIMM 8GB 3600MHz CL17 SR PITCH BLACK 1,2V. Order No. Stock No. OEM, Cena EU vč. DPH, VAT.
#70. Revolutionary Memory - SK hynix Research
FRAM(Ferroelectric RAM) is non-volatile random access memory with DRAM-level speed. World-first 1Xnm half-pitch FE-RAM with 8Gb density was fabricated, ...
#71. Wild Pitch Investigated by TABC - Grossman Law Offices
Texas dram shop attorney Michael Grossman reviews the record of TABC complaints against Wild Pitch for allegations of liquor law violations.
#72. Driven by Shrinking Pixel Pitch, Video Wall LED Market ...
TrendForce, a world leading market intelligence provider, covers various research sectors including DRAM, NAND Flash, SSD, LCD display, LED, ...
#73. Memory Connector - Product Introduction | LOTES CO.,LTD.
AFPC0001. 0.5mm Pitch 8.05H FPC, Vertical, SMT, USB 4.0 Compliant ... 1.80mm Pitch DIP R/A WTB · 1.80mm Pitch DIP Vertical WTB · 1.80mm Pitch SMT R/A WTB ...
#74. DRAM產業概況及南亞科技營運報告 - Nanya Technology
Nanya Stack DRAM Technology Node. Mim. Half Pitch, nm. Cell Size. • 80%+ size scaling since 68nm in 2008. • Double patterning since 30nm in 2011.
#75. Relative Pitch Records - DRAM
Relative Pitch Records is a labor of love from Kevin Reilly, a true fan of jazz and improvised music and a constant and critical presence on the New York ...
#76. High density hexagonal MTJ array with 72 nm pitch ... - X-MOL
To our knowledge, both pitch size and critical dimension size are the ... MTJ array with 72 nm pitch and 30 nm CD by using advanced DRAM ...
#77. DRAM，進入EUV時代！
昨日，韓國存儲廠商SK海力士宣佈，公司第一代使用EUV光刻機生產的DRAM正式量產。 ... 感測放⼤器電路區)的臨界尺⼨(CD/pitch)約40納米，S/A區域的BLP線寬爲13.5納米。
#78. Compact Board-to-Board solutions in 1.27mm pitch
Alcom brings Intelligent Memory's products to the regional market. Intelligent Memory produces an extensive products range of own DRAM Component, DRAM modules ...
#79. DRAM(wBGA)... - 沛顿科技（深圳）有限公司
DRAM (wBGA). Payton is the largest manufacturer to produce wBGA of DRAM DDR3 in China. ... Ball Pitch: 0.8mm. Height : 1.2 mm(Max).
#80. IEEE Releases Expansive 2018 Roadmap for Devices and ...
ORTC: DRAM Notes [1] The definition of DRAM Half pitch has been changed from this edition. Because of 6F2 DRAM cell, BL pitch is no more ...
#81. Hexagonal Hole Array Patterning for Memory Applications
DRAM chip and is therefore a critical parameter ... the current DRAM technology nodes are typically ... If a pre-pattern with a pitch commensurate to.
#82. 力成科技股份有限公司2022年第一季法人說明會
動態記憶體(DRAM) ... FC bonding with MR or TCB (≥55um bump pitch) ... SoC-HBM interconnect with fine pitch RDL. CLIP® : SoC + HBM for HPC.
#83. Memory - Onto Innovation
Memory has become the cornerstone of the mobile world and one of the most critical semiconductor devices manufactured today. 3D NAND Process Control; DRAM High ...
#84. Advances in CD-Metrology (CD-SAXS, Mueller Matrix based ...
DRAM ½ Pitch (nm) (contacted) ... Double Patterning Metrology Requirements, Generic Pitch Spliting - Double Patterning. Requirements Driven by MPU metal 1/2 ...
#85. 大国博弈，芯片为牌，美商务部限制升级，加速冲击半导体产业
管制16nm/14nm及以下的FinFET GAA，18nm half-pitch DRAM，128层以上NAND flash相关设备的出口，除特殊个案外，任何在国内使用皆无法获得许可。
#86. Commerce Implements New Export Controls on ... - BIS.doc.gov
DRAM memory chips of 18nm half-pitch or less;. • NAND flash memory chips with 128 layers or more. 7.) Restricts the ability of U.S. persons ...
#87. High Pitch Whine From RAM RGB : r/GSkill - Reddit
If I turn the LEDs for the RAM off, the sound disappears immediately. The other LEDs (GPU, on-board and AIO) don't affect this high pitch noise ...
#88. DRAM Sport and Community Centre
2 Rugby pitches. Football pitch. Referees' changing. Multi use games area for basketball,netball, 5-a-side, wheelchair games. Parking ...
#89. Thy Tran, VP of DRAM Process Integration at Micron
The Six Five is live for Micron's 1-beta DRAM announcement unveiled this week with ... So we borrowed the initial pitch or we call it pitch ...
#90. HBM Memory Interface Subsystem IP - Rambus
HBM3 & HBM2E PHY IP ; SSO Noise Reduction, Yes, Yes ; Micro-bump Pitch Matched to the DRAM Pitch, Yes, Yes ; Metal Stack, 15 layers, 13 or 15 layers ; Orientation ...
#91. Logic Double Patterning at Pitches Below 80 nm
ITRS Lithography Roadmap 2007. Logic nodes. 80 nm pitch. ▫ Logic pitch is relaxed vs. DRAM, but will transition below 80 nm for 15 nm node.
#92. 新創X法律，第一屆Pitch Campaign 法律簡報跨校競賽開跑
趨勢,簡報,法律,數位轉型(pitch-campaign) ... pitch-campaign-1030x579 ... DRAM 頻寬的降低主要得益于全新Immortalis-G720 GPU，作為全新第五代GPU ...
#93. The 50-nm DRAM battle rages on: An overview of Micron's ...
Micron is keeping quiet about whether or not they are using immersion lithography in production. Micron's 50-nm wordline half-pitch results in ...
#94. Ram Golf Pitch and Putt Lightweight Golf Carry Bag with Stand ...
Ram Golf Pitch and Putt Lightweight Golf Carry Bag with Stand USA Flag. Rating *. Select Rating, 1 star (worst), 2 stars, 3 stars (average), 4 ...
#95. 美光超三星，其1α DRAM拥有业界最高存储密度！-CFM闪存市场
随着美光和SK海力士迈入下一技术节点，三星的技术优势难免会被超越。据韩媒报道，美光最新产品拥有0.315Gb/mm²的存储密度，half pitch为14.3nm，超越了 ...
#96. RE:【情報】記憶體還要更便宜！三星全球第一家量產18nm ...
即36nm 再做一次雙重曝光，變成pitch = 18nm. NAND的世代的話，就會被稱為9nm (1/2 pitch = 9nm). NAND跟DRAM的結構有著決定性的不同.
#97. Voice and Speech for the Actor II (DRAM 363)
Extension of range and control of pitch. The voice as a communicative instrument, and the beginning of its technical control through the speaking of prose ...
dram pitch 在 Re: [問題] 半導體的問題- 看板Electronics - 批踢踢實業坊 的推薦與評價
: 1. cell size 44F^2代表的什麼意思 是指cell的面積嗎? F是一種單位嗎?
: 2.cell size 0.64*0.56 um^2 =44F^2 這是怎麼換算出來的?
: 3.The TEOS liner becomes U-shaped tunnel oxide to surround the nitride plug
: as the charges at the two corners of the nitride plug. 想請問一下這是句話
: 是在說明什麼? 是不是說 TEOS liner這個材質變成U形狀圍繞氮化矽堵塞物， 電荷
: 穿透氧化層然後在氮化矽堵塞物兩個角落旁儲存。是這個意思嗎?
: 我是剛進入半導體這領域的新手 很多不懂
: 希望能請版上高手多多指導
: 謝謝
1. F不是科學記號，那是用在記憶體上來描述元件的尺寸。
F是 Feature size, F的縮寫。
中文的意思是，〔特徵尺寸〕，定義為DRAM的一半線寬(half pitch)。
ps.舉個例子，我們常說的90/65/45/32奈米製程，這些指的是
製程世代/節點(technology generation/node。)
對邏輯產品而言，指的是電路佈局上的閘極寬度(gate length)
對DRAM產品而言，指的是二分之一的pitch (spacing + width)
對Flash產品而言，指的是相鄰兩個浮動閘極(floating gate)的距離
而〔F〕，指的是（或小於）該製程世代的尺寸。
以你的例子，就一個90nm製程而言(F = 90nm = 0.09um)
44F^2 ＝ 44 x 0.09 x 0.09 = 0.64 * 0.56 um^2
0.64與0.56指的是memory cell的X,Y尺寸(你可以把它想像是一個長方形一樣。)
如果是65nm製程(若元件的尺寸不變0.64與0.56)，那就是84F^2。
(一般而言，不會是0.64um與0.56um，而且也不會是84F^2)
(應該說要反推回去求XY的最小尺寸才對，畢竟65nm比90nm，尺寸要更小才對。)
3.這好像跟SONOS有關，講的是電荷存在tunnel oxide的兩邊，一種2bit/cell的元件架構
--
在臺灣，何謂R&D工程師?
1.Reverse and Decap :IC反相工程，去膠，打開封裝，拍照，複製電路佈局。
2.Resign and Die :沒死的就操到辭職，沒辭職的就操到死。
3.Rework and Debug :計畫永遠跟不上變化，變化永遠跟不上老闆的一句話!
4.Relax and Delay :太過於輕鬆(Relax)，那麼就會Random Death (隨時陣亡)
但是外派到大陸的臺彎郎，晚上是R (鴨)陪客戶，白天是D (豬)任人宰割!
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