[NCTUEE Talk]Overview of Beyond CMOS Research at imec
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Invite you all to come if available. It will be a good opportunity to enhance our collaboration with imec.
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Title: Overview of Beyond CMOS Research at imec
Speaker: Dr. Iuliana Radu
Time: July 7th, 10:30AM
Place: R528, Engineering Building 4, NCTU 交通大學工程四館5樓528室
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Bio: Dr. Iuliana Radu is Distinguished Member of Technical Staff leading the Beyond CMOS activities at imec, Belgium. Prior to establishing the Beyond CMOS program in 2013, she was a Marie Curie and an FWO fellow at KU Leuven and imec. Her current research includes devices with 2D materials and new device concepts (such as majority gates and spintronics). During her postdoctoral work she has studied the metal-to-insulator transition and ionic and electronic transport in functional oxides for memory and logic applications.
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Iuliana has received a PhD in Physics from MIT (Boston, USA) in 2009 where she worked on the Fractional Quantum Hall effect and searched for non-abelian quasiparticles. She has received an MSc and a BSc in Physics from the University of Bucharest. She has authored over 70 papers in leading peer-reviewed journals and conferences. She has given more than 20 invited talks at international conferences and seminars.
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Abstract: We will give a brief overview of the research topics currently active at imec focusing on Beyond CMOS activities. We will discuss the progress we are making in the growth and characterization of 2D materials and report on device fabrication with these materials touching on key issues such as contact resistance and gate dielectric growth. The last part of the presentation will be dedicated to spintronic devices and interconnect and their benchmarking at circuit level with standard CMOS technology in terms of performance.
cmos and gate 在 國立陽明交通大學電子工程學系及電子研究所 Facebook 的精選貼文
交大電子系莊紹勳教授、謝易叡同學、王元鼎同學傑出研究獲選2016 Symposium on VLSI Technology and Circuits頂尖國際會議論文
論文題目:A New Variation Plot to Examine the Interfacial‐dipole Induced Work‐function Variation in Advanced High‐k Metal‐gate CMOS Devices
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[Free Symposium]2013 NCTU-UC Berkeley I-RiCE Bilateral Symposium on III‐V/Si Heterogeneous Integration for Next Generation Microelectronic Applications
Time : 09:00 a.m.-17:30 p.m., Friday September 13, 2013
Location: Conference Room 100, MIRC, National Chiao Tung University(交通大學電子資訊研究大樓國際會議廳)
Registration : Before September 12, 2013. Please visit http://goo.gl/WuDAxP to register. This Symposium is free of charge.
Please visit http://www.ee.nctu.edu.tw/News/ShowArticle.php?Number=1043 to find the detailed information.
Agenda :
09:00-09:30
Registration
09:30-09:40
Opening Remarks
Prof. Edward-Yi Chang
Dean of Research and Development
Professor, Department of Materials Science and Engineering; Department of Electronics Engineering, NCTU, Taiwan
Session Chair: Prof. Steve S. Chung (NCTU)
09:40-10:40
Subject : FinFET and Thin Body Transistor
Prof. Chenming Hu
Professor, Department of Electrical Engineering and Computer Sciences, UC Berkeley, USA
10:40-11:00
Coffee Break
11:00-12:00
Subject : On the Possibility of a Negative Capacitance Transistor for Low Power Electronics
Prof. Sayeef Salahuddin
Professor, Department of Electrical Engineering and Computer Sciences, UC Berkeley, USA
12:00-13:30
Lunch
Session Chair: Prof. K. N. Chen (NCTU)
13:30-14:10
Subject : InAs QWFET for Terahertz and Post CMOS Device Applications
Prof. Edward-Yi Chang
Dean of Research and Development
Professor, Department of Materials Science and Engineering; Department of Electronics Engineering, NCTU, Taiwan
14:10-14:50
Subject : High Mobility Ge Channel MOSFETs Directly on Si
Prof. Chao-Hsin Chien
Professor, Department of Electronics Engineering, NCTU, Taiwan
14:50-15:10
Coffee Break
Session Chair: Prof. H. C. Lin (NCTU)
15:10-16:10
Subject : La2O3 Gate Dielectrics for InGaAs Channel: Interface Control and Scalability
Prof. Kuniyuki Kakushima
Professor, Department of Electronics and Applied Physics, Tokyo Institute of Technology, Japan
16:10-16:50
Subject : Analysis of Germanium UTB/FinFET Logic Circuits and SRAM Cells
Dr. Vita Pi-Ho Hu
Assistant Researcher, Department of Electronics Engineering, NCTU, Taiwan
16:50-17:30
Closing Remarks
cmos and gate 在 CMOS and gate implementation - Electronics Stack Exchange 的推薦與評價
Let us analyze your circuit. When both inputs are low, the PMOS are on, the NMOS are off, the out is tied low by the PMOS. ... <看更多>